Thin film transistor array panel and method for manufacturing the same

ABSTRACT

A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal suicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. application Ser. No. 14/466,317filed on Aug. 22, 2014, which claims priority under 35 U.S.C. § 119 toKorean Patent Application No. 10-2014-0003548, filed on Jan. 10, 2014 inthe Korean Intellectual Property Office, the disclosure of which isincorporated by reference herein in its entirety.

TECHNICAL FIELD

The present invention relates to a thin film transistor array panel anda manufacturing method thereof.

DESCRIPTION OF THE RELATED ART

Displays such as a liquid crystal display (LCD), an organic lightemitting diode (OLED) display, and the like include multiple pairs ofelectric field generating electrodes and an electro-optical active layerinterposed therebetween. The liquid crystal display includes a liquidcrystal layer as the electro-optical active layer, and the organic lightemitting display includes an organic light emitting layer as theelectro-optical active layer.

Field generating electrodes are connected to switching elements toreceive electrical signals, and the electro-optical active layerconverts the electrical signals into optical signals to display animage. Such switching elements include thin film transistors. The thinfilm transistors include a gate line transferring a scanning signal forcontrolling the thin film transistor, a data line transferring a signalapplied to a pixel electrode.

As a displaying area of display devices becomes larger, fasterpropagation of the signals across the displaying area is required.

SUMMARY

According to an exemplary embodiment of the present invention, a thinfilm transistor array panel is provided as follows. A gate electrode isdisposed on a substrate. A semiconductor layer is disposed on the gateelectrode. A gate insulating layer is disposed between the gateelectrode and the semiconductor layer. A source electrode is disposed ona first side of the semiconductor layer, having a first lateral surface.A drain electrode is disposed on a second side of the semiconductorlayer, having a second lateral surface. The first and second lateralsurfaces define a spacing which overlaps the gate electrode. A metalsilicide layer is disposed on the first and second lateral surfaces. Apassivation layer is disposed on the metal silicide layer, the sourceelectrode and the drain electrode. The passivation layer is not incontact with the first and second lateral surfaces.

According to an exemplary embodiment of the present invention, a methodof manufacturing a thin film transistor array panel is provided asfollows. A gate electrode is formed on a substrate. A semiconductorlayer is formed on the substrate and the gate electrode. A gateinsulating layer is formed between the gate electrode and thesemiconductor layer. Source and drain electrodes are disposed on firstand second sides of the gate electrode. The source and drain electrodesinclude a metal element. A silane (SiH₄) material layer is formed on thesource and drain electrodes. A passivation layer is formed on the sourceand drain electrodes. The forming of the passivation layer causes ansilicidation process. The silicidation process includes a reactionbetween silicon of the silane (SiH₄) material layer and the metalelement of the source and drain electrodes thereby forming a metalsilicide layer on first and second lateral sides of the source and drainelectrodes. The first and second lateral sides define a spacing thatoverlaps the gate electrode. The first and second lateral sides are incontact with the metal silicide layer without being in contact with thepassivation layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of the present invention will become moreapparent by describing exemplary embodiments thereof with reference tothe accompanying drawings of which:

FIG. 1 is a top plan view of a thin film transistor array panelaccording to an exemplary embodiment of the present invention;

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1;

FIG. 3 to FIG. 10 are cross-sectional views showing a manufacturingmethod of a thin film transistor array panel according to an exemplaryembodiment of the present invention;

FIG. 11 is a cross-sectional view of a liquid crystal display accordingto an exemplary embodiment of the present invention;

FIG. 12 is a picture of an interface between a main wiring layer and apassivation layer in a thin film transistor array panel according to anexemplary embodiment of the present invention;

FIG. 13 is a cross-sectional view of a thin film transistor array panelaccording to an exemplary embodiment of the present invention takenalong line II-II of FIG. 1;

FIG. 14 to FIG. 20 are cross-sectional views showing a manufacturingmethod of a thin film transistor array panel according to an exemplaryembodiment of the present invention; and

FIG. 21 is a picture of an interface between a main wiring layer and apassivation layer in a thin film transistor array panel according to anexemplary embodiment of the present invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Exemplary embodiments of the present invention will be described belowin detail with reference to the accompanying drawings. However, thepresent invention may be embodied in different forms and should not beconstrued as limited to the embodiments set forth herein. In thedrawings, the thickness of layers and regions may be exaggerated forclarity. It will also be understood that when an element is referred toas being “on” another element or substrate, it may be directly on theother element or substrate, or intervening layers may also be present.It will also be understood that when an element is referred to as being“coupled to” or “connected to” another element, it may be directlycoupled to or connected to the other element, or intervening elementsmay also be present. Like reference numerals may refer to the likeelements throughout the specification and drawings.

FIG. 1 is a top plan view of a thin film transistor array panelaccording to an exemplary embodiment of the present invention. FIG. 2 isa cross-sectional view taken along line II-II of FIG. 1.

Referring to FIG. 1 and FIG. 2, the thin film transistor array panel 100includes gate lines 121 formed on an insulation substrate 110 formed oftransparent glass or plastic.

The gate lines 121 transmit a gate signal and extend in a transversedirection. Each gate line 121 includes gate electrodes 124 protrudingfrom the gate line 121.

The gate line 121 and the gate electrode 124 may have a dual-layerstructure having first layers 121 p and 124 p and second layers 121 qand 124 q. Each of the first layers 121 p and 124 p and the secondlayers 121 q and 124 q may be formed of an aluminum-based metal such asaluminum (Al) and an aluminum alloy, a silver-based metal such as silver(Ag) and a silver alloy, a copper-based metal such as copper (Cu) and acopper alloy, a molybdenum-based metal such as molybdenum (Mo) and amolybdenum alloy, chromium (Cr), titanium (Ti), tantalum (Ta), manganese(Mn), or the like. For example, the first layers 121 p and 124 p mayinclude titanium, and the second layers 121 q and 124 q may includecopper or a copper alloy.

Alternatively, the first layers 121 p and 124 p and the second layers121 q and the 124 q may be formed of a combination of films havingdifferent physical properties. The gate line 121 and the gate electrode124 include two layers, but are not limited thereto, and may be formedas a single layer or three layers.

A gate insulating layer 140 formed of an insulating material such as asilicon oxide or a silicon nitride is positioned on the gate line 121.The gate insulating layer 140 may include a first insulating layer 140 aand a second insulating layer 140 b. The first insulating layer 140 amay be formed of a silicon nitride (SiN_(x)) with a thickness of about4000 Å, and the second insulating layer may be formed of a silicon oxide(SiO_(x)) with a thickness of about 500 Å. Alternatively, the firstinsulating layer 140 a may be formed of a silicon oxynitride (SiON), andthe second insulating layer 140 b may be formed of a silicon oxide(SiO_(x)). The gate insulating layers 140 a and 140 b include twolayers, but may include a single layer.

Semiconductor layers 151 are formed on the gate insulating layer 140.The semiconductor layers 151 may be formed of amorphous silicon,crystalline silicon, or an oxide semiconductor. The semiconductor layers151 extend primarily in a vertical direction and include projections 154that protrude toward the gate electrode 124.

When the semiconductor layer 151 is formed of an oxide semiconductor,the semiconductor layer 151 contains at least one of zinc (Zn), indium(In), tin (Sn), gallium (Ga), and hafnium (Hf). For example, Thesemiconductor layer 151 may be an indium-gallium-zinc oxide.

Data lines 171, source electrodes 173 connected to the data lines 171,and drain electrodes 175 are formed on the semiconductor layer 151 andthe gate insulating layer 140. The data lines 171 transfer data signalsand extend primarily in the vertical direction to cross the gate lines121. The source electrode 173 may extend from the data line 171. Thesource electrode 173 may overlap the gate electrode 124. The sourceelectrode 173 may be substantially U-shaped.

The drain electrode 175 is separated from the data line 171 and extendsupward from the center of the “U” shape of the source electrode 173.

The data line 171, the source electrode 173, and the drain electrode 175have a dual-film structure of barrier layers 171 p, 173 p, and 175 p andmain wiring layers 171 q, 173 q, and 175 q. The barrier layers 171 p,173 p, and 175 p are formed of a metal oxide and the main wiring layers171 q, 173 q, and 175 q are formed of copper or the copper alloy.

For example, the barrier layers 171 p, 173 p, and 175 p may be formed ofone of an indium-zinc oxide, a gallium-zinc oxide, and an aluminum-zincoxide.

The barrier layers 171 p, 173 p, and 175 p serve to prevent the materialsuch as copper or the like from being diffused to the semiconductorlayer 151.

A metal silicide layer 177 is positioned on the main wiring layers 171q, 173 q, and 175 q. The metal silicide layer 177 includes copper,silicon, and oxygen, and for example, may include a compound representedby CuSi_(x)O_(y). The metal silicide layer 177, covering the sourceelectrode 173 and the drain electrode 175, is in contact with thesurface of the source electrode 173 and the drain electrode 175. Forexample, the metal silicide layer 177 covers exposed lateral surfaces Aand B of the source electrode 173 and the drain electrode 175 andexposed upper surfaces of the source electrode 173 and the drainelectrode 175. The metal silicide layer 177 is not in contact with thegate insulating layer 140.

Hereafter, the exposed later surface A of the source electrode 173 andthe drain electrode 175 near the channel region of the semiconductorlayer 151 will be described.

Referring to FIG. 2, the projection 154 of the semiconductor layer 151includes a portion that is not covered by the data line 171, the sourceelectrode 173 and the drain electrode 175. For example, the portion ofthe projection is exposed between the source electrode 173 and the drainelectrode 175. The data line 151, the source electrode 173 and the drainelectrode 175 are stacked on the semiconductor layer 151. The portion ofthe projection in the semiconductor layer 151 is exposed between thesource and drain electrodes 173 and 175. The edge of the semiconductorlayer 151 is vertically aligned with outer edges of the data line 171and the drain electrode 175. Inner edges of the source and drainelectrodes 173 and 175 defines the exposed portion of the projection154. The edges of the data line 171, the source electrode 173 and thedrain electrode 175 may be vertically sloped.

One gate electrode 124, one source electrode 173, and one drainelectrode 175 form one thin film transistor (TFT) along with theprojection 154 of the oxide semiconductor layer 151, and the channel ofthe thin film transistor is formed in the projection 154 between thesource electrode 173 and the drain electrode 175.

Lateral surfaces of the source electrode 173 and the drain electrode 175adjacent to the channel region are exposed, and exposed lateral parts Aof the source electrode 173 and the drain electrode 175 are covered bythe metal silicide layer 177. If the lateral parts A of the sourceelectrode 173 and the drain electrode 175 is exposed without the metalsilicide layer 177, if a following process forming the passivation layerincluding a silicon oxide is performed or a heat treatment to provide achannel characteristic to the protrusion 154 of the semiconductor layeris performed, the material such as copper included in the main wiringlayers 171 q, 173 q, and 175 q forms an porous oxide such that the thinfilm transistor characteristic may be decreased.

Accordingly, the metal suicide layer may prevent the material such ascopper or the like from being oxidized in performing subsequentprocesses such as forming the passivation layer and performing the heattreatment.

The metal suicide layer 177 may formed using two step processesincluding forming a silane material layer and performing a silicidationprocess using the silane material layer. Detailed descriptions will bemade later with reference to FIGS. 8-10. A passivation layer 180 isformed on the metal silicide layer 177. The passivation layer 180 isformed of an inorganic insulator such as a silicon nitride or a siliconoxide, an organic insulator, or a low-dielectric insulator.

The passivation layer 180 may include a lower passivation layer 180 aand an upper passivation layer 180 b. The lower passivation layer 180 amay be formed of a silicon oxide and the upper passivation layer 180 bmay be formed of a silicon nitride.

Since the semiconductor layer 151 includes an oxide semiconductor, thelower passivation layer 180 a adjacent to the semiconductor layer 151 isformed of a silicon oxide. When the lower passivation layer 180 a isformed of a silicon nitride, the semiconductor layer 151 does not serveas a channel region of a thin film transistor.

The passivation layer 180 be in contact with the exposed part that isnot covered by the source electrode 173 and the drain electrode 175between the source electrode 173 and the drain electrode 175.

Contact holes 185 that expose one end of the drain electrodes 175 areformed on the passivation layer 180. Pixel electrodes 191 are formed onthe passivation layer 180. The pixel electrode 191 is physically andelectrically connected with the drain electrode 175 through the contacthole 185, and is applied with data voltage from the drain electrode 175.

The pixel electrode 191 may be formed of a transparent conductor such asITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

FIG. 3 to FIG. 10 are cross-sectional views illustrating a method formanufacturing a thin film transistor array panel according to anexemplary embodiment of the present invention. FIG. 3 to FIG. 10sequentially illustrate the cross-sectional views taken along line II-IIof FIG. 1.

Referring to FIG. 3, at least one of the molybdenum-based metal such asmolybdenum (Mo) and the molybdenum alloy, the chromium-based metal suchas chromium (Cr) and a chromium alloy, a titanium-based metal such astitanium (Ti) and a titanium alloy, a tantalum-based metal such astantalum (Ta) and a tantalum alloy, and a manganese-based metal such asmanganese (Mn) and a manganese alloy is deposited on the insulationsubstrate 110 formed of the transparent glass or plastic, and oneselected from an aluminum-based metal such as aluminum and the aluminumalloy, a silver based-metal such as silver (Ag) and the silver alloy,and a copper-based metal such as copper (Cu) and the copper alloy isdeposited thereon to form and pattern two layers, thereby forming thegate line 121 including the gate electrode 124. For example, the firstlayers 121 p and 124 p may contain titanium and the second layers 121 qand 124 q may contain copper or the copper alloy.

For example, after the two layers is formed, a photoresist (notillustrated) is deposited and patterned, and thereafter, the firstlayers 121 p and 124 p and the second layers 121 q and 124 q are etchedtogether by using the patterned photoresist (not illustrated) as a mask.In this case, as an etchant, one that can etch both the first layers 121p and 124 p and the second layers 121 q and 124 q may be used.

Referring to FIG. 4, the gate insulating layer 140, an oxide layer 150,a metal oxide layer 170 p, and a metal layer 170 q are deposited on thegate line 121 and the gate electrode 124. In the gate insulating layer140, the first insulating layer 140 a containing a silicon nitride maybe deposited, and then the second insulating layer 140 b containing asilicon oxide may be deposited.

The oxide layer 150 may contain at least one of zinc (Zn), indium (In),tin (Sn), gallium (Ga), and hafnium (Hf), the metal oxide layer 170 pmay contain one of an indium-zinc oxide, a gallium-zinc oxide, and analuminum-zinc oxide, and the metal layer 170 q may contain copper or acopper alloy. A photoresist is formed and patterned to form a firstphotoresist pattern 50 thereon. The first photoresist pattern 50 has athick first region 50 a and a relatively thin second region 50 b. Adifference in thickness of the first photoresist pattern 50 may beformed by controlling the amount of irradiated light with a mask or byusing a reflow method. When the amount of light is controlled, a slitpattern, a lattice pattern, or a semitransparent layer may be formed onthe mask. The thin second region 50 b corresponds to a position wherethe channel region of the thin film transistor is to be formed.

Referring to FIG. 5, the metal oxide layer 170 p and the metal layer 170q are etched by using an etchant that may etch both the metal oxidelayer 170 p and the metal layer 170 q by using the first photoresistpattern 50 as a mask. The etchant used herein may be the same as theetchant used when etching the first layers 121 p and 124 p and thesecond layers 121 q and 124 q of the gate line 121.

If the metal oxide layer 170 p and the metal layer 170 q are etched,lateral surfaces of the metal oxide layer 170 p and the metal layer 170q covered with the first photoresist pattern 50 are also etched by theetchant, and as a result, a boundary line of the first metal layer 170 pand the second metal layer 170 q is positioned inside regions

A, B, and C where the first photoresist pattern 50 is formed.

In this case, the etchant that etches the metal oxide layer 170 p andthe metal layer 170 q does not etch the gate insulating layer 140 andthe oxide layer 150.

Additionally, the oxide layer 150 is etched by using the firstphotoresist pattern 50 as the mask.

Referring to FIG. 6, the thin second region 50 b in FIG. 5 is removed byan etch-back process. In this case, the first region 50 a is also etchedand thus decreased in width and height to become a second photoresistpattern 51 of FIG. 6. The second photoresist pattern 51 is formed inregions B′ and C′ which are smaller than the regions B and C where thefirst photoresist pattern 50 is formed in FIG. 5.

Referring to FIG. 7, the metal oxide layer 170 p and the metal layer 170q are etched with an etchant by using the second photoresist pattern 51as a mask.

In this case, the metal oxide layer 170 p and the metal layer 170 q arepatterned to form the data lines 171 p and 171 g, the source electrodes173 p and 173 q, and the drain electrodes 175 p and 175 q having a twolayered structure. Further, the oxide semiconductor layer 151 includesthe projection 154. The projection 154 may serve as a channel region ofa thin film transistor.

Using the photoresist patterns having different thicknesses, formed arethe semiconductor layers 151 and 154, the barrier layers 171 p, 173 p,and 175 p, the main wiring layers 171 q, 173 q, and 175 q of the dataline 171, the source electrode 173, and the drain electrode 175. Sincethe semiconductor layers 151 and 154, the data line 171, the sourceelectrode 173, and the drain electrode 175 are formed using thephotoresist patterns as an etch mask, edges of them are verticallyaligned.

Next, referring to FIG. 8, after the photoresist pattern is removed byan ashing process, the source electrode 173 and the drain electrode 175are subjected to a silane (SiH₄) treatment to form a silane materiallayer 176. The silane (SiH₄) treatment may be performed through achemical vapor deposition (CVD) process.

Referring to FIG. 9, a silane material layer 176 is formed along thesurface of the source electrode 173 and the drain electrode 175 that aretreated with the silane (SiH4). At this time, each lateral surface ofthe source electrode 173 and the drain electrode 175 near the channelregion positioned between the source electrode 173 and the drainelectrode 175 is exposed, and the silane material layer 176 is formed onthe exposed lateral surfaces of the source electrode and the drainelectrode. For example, the exposed lateral surfaces of the source anddrain electrodes are covered by the silane material layer 176.

The silane material layer 176 is formed to cover the channel region andthe gate insulating layer 140 as well as the surface of the sourceelectrode 173 and the drain electrode 175.

Referring to FIG. 10, the passivation layer 180 is formed on the silanematerial layer 176. In forming the passivation layer 180, the lowerpassivation layer 180 a containing a silicon oxide may be formed on thesilane material layer 176, and the upper passivation layer 180 bcontaining a silicon nitride may be formed on the lower passivationlayer 180 a . The lower passivation layer 180 a including a siliconoxide (SiOx) may be formed by, for example, the reaction of SiH 4 and NO2. In the process of the lower passivation layer 180 a, the silanematerial layer 176 may react with the copper or copper alloy of the mainwiring layers 171 q , 173 q , and 175 q , thereby forming the metalsilicide layer 177. Here, the silane material layer 176 may beselectively converted to the metal silicide layer 177 where the silanematerial layer 176 is in contact with the main wiring layers 171 q , 173q , and 175 q formed of copper or the copper alloy.

The contact hole 185 exposing a part of the drain electrode 175 isformed by patterning the passivation layer 180, and the pixel electrode191 is formed on the passivation layer 180 to form the thin filmtransistor array panel of FIG. 2. In this case, the pixel electrode 191is formed to be physically connected with the drain electrode 175through the contact hole 185.

FIG. 11 is a cross-sectional view illustrating a thin film transistorarray panel according to an exemplary embodiment of the presentinvention.

Referring to FIG. 11, a second substrate 210 faces the insulationsubstrate 110. The second substrate 210 may be an insulation substrateformed of the transparent glass or plastic. A light blocking member 220is formed on the second substrate 210. The light blocking member 220 maybe formed of a black matrix and serve to prevent light leakage.

Color filters 230 are also formed on the second substrate 210 and thelight blocking member 220. The color filters 230 are disposed in aregion surrounded by the light blocking member 220, and may be elongatedalong a column of the pixel electrodes 191. Each color filter 230 mayexpress one of three primary colors such as red, green, and blue.However, the expressed colors are not limited to the three primarycolors of red, green, and blue, and each color filter 230 may expressone of cyan, magenta, yellow, or white-based colors.

The light blocking member 220 and the color filter 230 are formed on anopposed array panel 200 as described above, however at least one of thelight blocking member 220 and the color filter 230 may be formed on thethin film transistor array panel 100.

An overcoat 250 is formed on the color filter 230 and the light blockingmember 220. The overcoat 250 may be formed of the insulation material.The overcoat 250 may seal the color filter 230, and may also provide aflat surface. Alternatively, the overcoat 250 may be omitted.

A common electrode 270 is formed on the overcoat 250.

The pixel electrode 191 applied with the data voltage generates anelectric field together with the common electrode 270 applied withcommon voltage to determine a direction of liquid crystal molecules 31of a liquid crystal layer 3 between the two electrodes. The pixelelectrode 191 and the common electrode 270 constitute a capacitor tomaintain the applied voltage even after the thin film transistor isturned off.

The pixel electrode 191 overlaps with a storage electrode line (notillustrated) to constitute a storage capacitor, and as a result, voltagestoring capability of a liquid crystal capacitor may be increased.

The description of the thin film transistor array panel 100 may beapplied with the content of the exemplary embodiment described withreference to FIG. 2.

The thin film transistor array panel according to an exemplaryembodiment is not limited to a liquid crystal display, but may beapplied to other display systems such as an organic light emittingdevice.

FIG. 12 is a picture of an interface between a main wiring layer and apassivation layer in a thin film transistor array panel according to anexemplary embodiment of the present invention.

FIG. 12 is an electronic microscope picture of a thin film transistorarray panel according to an exemplary embodiment of the presentinvention. Referring to FIG. 12, the metal suicide layer 177 isuniformly formed at the interface between the main wiring layer 173 qand the lower passivation layer 180 a. Also, a pollution source such asa copper oxide is not formed.

FIG. 13 is a cross-sectional view of a thin film transistor array panelaccording to an exemplary embodiment of the present invention takenalong line II-II of FIG. 1. The cross-sectional structure of FIG. 13 issubstantially similar to that of FIG. 2, except for the source and drainelectrodes 173 and 175. Hereafter, a difference from the exemplaryembodiment of FIG. 2 will be described.

Referring to FIG. 13, the data line 171, the source electrode 173, andthe drain electrode 175 further include capping layers 171 r, 173 r, and175 r formed on the main wiring layers 171 q, 173 q, and 175 q. Thecapping layers 171 r, 173 r, and 175 r include a metal oxide. Forexample, the capping layers 171 r, 173 r, and 175 r may be formed of atleast one of indium-zinc oxide, gallium-zinc oxide, aluminum-zinc oxide,and gallium-zinc oxide. For example, the metal silicide layer 177 isformed only at lateral surfaces of the main wiring layers 171 q, 173 q,and 175 q. The lateral surfaces of the main wiring layers 171 q, 173 qand 175 q are not covered by the barrier layers 171 p, 173 p, and 175 pand the capping layers 171 r, 173 r, and 175 r. For example, the lateralsurface of the main wiring layers 171 q, 173 q and 175 q are exposedbetween the barrier layers 171 p, 173 p and 175 p and the capping layers171 r, 173 r and 175 r.

Except for the described difference, the content described in FIG. 2 mayall be applied to the present exemplary embodiment of FIG. 13.

FIG. 14 to FIG. 20 are cross-sectional views showing a manufacturingmethod of a thin film transistor array panel according to an exemplaryembodiment of the present invention. FIG. 14 to FIG. 20 sequentiallyshow the cross-sectional views taken along line II-II of FIG. 1.

Referring to FIG. 14 to FIG. 19, the manufacturing method of the thinfilm transistor array panel according to an exemplary embodiment of thepresent invention is substantially similar to the exemplary embodimentdescribed in FIG. 4 to FIG. 9. Referring to FIG. 14, a metal oxide layer170 r may be additionally formed on the metal layer 170 q. In followingprocess, the metal oxide layer 170 r is patterned together with theunderlying metal layer 170 q and the metal oxide layer 170 p, as shownin FIG. 17, and thereby the capping layers 171 r, 173 r, and 175 r areformed on the main wiring layers 171 q, 173 q, and 175 q.

Referring to FIG. 18, after the photoresist pattern is removed by anashing process, the surfaces of the source electrode 173 and the drainelectrode 175 are subjected to a silane (SiH₄) treatment to form asilane material layer 176. The silane (SiH₄) treatment may be performedthrough a chemical vapor deposition (CVD) method.

Referring to FIG. 19, the silane material layer 176 is formed along thesurface of the source electrode 173 and the drain electrode 175 that istreated with the silane (SiH₄). At this time, among each lateral surfaceof the source electrode 173 and the drain electrode 175 near the channelregion positioned between the source electrode 173 and the drainelectrode 175, the silane material layer 176 is formed to cover theexposed lateral surfaces of the main wiring layers 171 q, 173 q, and 175q between the barrier layers 171 p, 173 p, and 175 p and the cappinglayers 171 r, 173 r, and 175 r. The silane material layer 176 is formedto cover the channel region and the gate insulating layer 140 as well asthe surface of the source electrode 173 and the drain electrode 175.

Referring to FIG. 20, a passivation layer 180 is formed on the silanematerial layer 176. In forming the passivation layer 180, the lowerpassivation layer 180 a containing a silicon oxide may be formed on thesilane material layer 176 and the upper passivation layer 180 bcontaining silicon nitride may be formed on the lower passivation layer180 a. The lower passivation layer 180 a including silicon oxide(SiO_(x)) may be formed by a reaction of silane (SiH₄) and nitrogendioxide (NO₂). In the formation of the lower passivation layer 180 a,the silane material layer 176 and the main wiring layers 171 q, 173 q,and 175 q react with each other, thereby forming the metal silicidelayer 177. The main wiring layers 171 q, 173 q, and 175 q are formed ofcopper or the copper alloy. In the formation of the lower passivationlayer 180 a, silicon of the silane material layer 176 may react with thecopper or copper alloy at an interface between the silane material layer176 and the source electrode 173 and the drain electrode 175.

The contact hole 185 exposing a part of the drain electrode 175 isformed by patterning the passivation layer 180, and the pixel electrode191 is formed on the passivation layer 180 to form the thin filmtransistor array panel of FIG. 13. In this case, the pixel electrode 191is formed to be physically connected with the drain electrode 175through the contact hole 185.

FIG. 21 is the picture of an electronic microscope after the thin filmtransistor array panel according to an exemplary embodiment of thepresent invention is formed, and referring to FIG. 21, the metalsilicide layer 177 is uniformly formed at the interface between the mainwiring layer 173 q and the lower passivation layer 180 a. Also, apollution source such as a copper oxide is not formed.

While the present invention has been shown and described with referenceto exemplary embodiments thereof, it will be apparent to those ofordinary skill in the art that various changes in form and detail may bemade therein without departing from the spirit and scope of the presentinvention as defined by the following claims.

What is claimed is:
 1. A method of manufacturing a thin film transistor array panel, comprising: forming a gate electrode on a substrate; forming a semiconductor layer on the substrate and the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer; forming source and drain electrodes dispose d on first and second sides of the semiconductor layer, respectively, wherein the source and drain electrodes include a metal element; forming a silane (SiH₄) material layer on the source and drain electrodes; and forming a passivation layer on the source and drain electrodes, wherein the forming of the passivation layer causes a silicidation process wherein the silicidation process comprises a reaction between silicon of the silane (SiH₄) material layer and the metal element of the source and drain electrodes thereby forming a metal silicide layer on first and second lateral sides of the source and drain electrodes, respectively, wherein the first and second lateral sides define a spacing that overlaps the gate electrode, wherein the first and second lateral sides are in direct with the metal silicide layer without being in contact with the passivation layer.
 2. The method of claim 1, wherein the forming of the silane (SiH₄) material layer is performed by a chemical vapor deposition process.
 3. The method of claim 2, wherein the passivation layer is formed by a reaction of SiH₄ and NO₂.
 4. The method of claim 3, wherein the passivation layer is in contact with the semiconductor layer through the spacing defined by the first and second lateral surfaces of the source and drain electrodes.
 5. The method of claim 4, wherein the forming of the source electrode includes forming a barrier layer on the semiconductor layer and forming a main wiring layer on the barrier layer, and the main wiring layer includes copper or a copper alloy and the barrier layer includes a metal oxide.
 6. The method of claim 5, wherein the forming of the passivation layer includes forming a lower passivation layer and forming an upper passivation layer, wherein the forming of the lower passivation layer causes the silicidation process to occur at an interface between the main wiring layer and the silane (SiH₄) material layer, wherein the lower passivation layer includes silicon oxide, and the upper passivation layer includes silicon nitride.
 7. The method of claim 6, wherein the metal silicide layer is further disposed on upper surfaces of the source and drain electrodes, wherein the upper surfaces of the source and drain electrodes are not in contact with the passivation layer.
 8. The method of claim 5, further comprising forming a capping layer on an upper surface of the main wiring layer, wherein the upper surface of the main wiring layer is not in contact with the passivation layer.
 9. The method of claim 1, wherein the semiconductor layer includes an oxide semiconductor.
 10. The method of claim 1, wherein the forming of the semiconductor layer and the forming of the source and drain electrodes are performed by using a mask. 